electron trap
英 [ɪˈlektrɒn træp]
美 [ɪˈlektrɑːn træp]
电子（陷）阱
双语例句
- Confinement of electron sin non-neutral plasma with dense core in an electron beam Penning trap
电子束潘宁阱非中性等离子体中电子聚心约束实验 - Effects of the Electron Trap on the Photoelectron
电子陷阱对光电子的影响 - Temperature dependence and mechanisms of electron trap generation at high field in nitrided oxide and sio_2 film
SiOxNy和SiO2膜中的高场电子陷阱的温度依赖性和产生机理 - The decay time of photoelectron in chemistry-and-spectra sensitized emulsion is also prolonged, and the shallow electron trap effect of chemical sensitization center is more distinct under the condition of spectra sensitization.
化学与光谱共同增感使光电子的衰减时间在光谱增感的基础上得到了延长，且硫加金化学增感中心的浅电子陷阱效应在光谱增感的基础上更明显。 - Effects of Electron Trap on Photosensitive Process of AgX Microcrystals
电子陷阱对卤化银微晶感光过程的影响 - Design and Analysis of Single Electron hole Trap Memory
电子空穴对单电子陷阱存储器的设计与分析 - Relation between 0.72 eV Electron Trap and Growth Conditions in LPE-GaAs
LPE-GaAs中0.72eV电子陷阱与生长条件的关系 - Applying shallow electron trap forming dopants in the preparation of silver halide emulsion may increase photographic sensitivity evidently.
在卤化银乳剂制备过程中使用浅电子陷阱剂可有效地提高照相感光度。 - Design and manufacture of cryogenic and superconductor system for Shanghai Electron Beam Ion Trap
上海电子束离子阱低温超导磁体系统的研制 - The results indicate that the function of reduction sensitization center is hole trap at lower reduction sensitization temperature and the function of reduction sensitization center is deep electron trap at higher reduction sensitization temperature.
实验发现还原增感温度变化会引起增感中心陷阱作用的变化：当还原增感温度较低时，增感中心起空穴陷阱作用，延缓光电子衰减； - The Research on Electron Trap in SiO_2 Film Nitrided by Plasma
等离子体氮化SiO2膜中电子陷阱的研究 - An effective way of decreasing bulk electron trap density and interface state density is put forward.
提出降低体电子陷阱密度和界面态密度的有效途径。 - The gas injection system for Shanghai electron beam ion trap ( EBIT) facility is successfully developed.
本文介绍了上海电子束离子阱（EBIT）装置微量气体注入系统的成功研制。 - The origin and discharge mechanism of electron trap are revealed.
揭示出电子陷阱的起源和放电机理； - Vacuum control system for the Shanghai Electron Beam Ion Trap Facility
上海电子束离子阱装置真空控制系统 - The conception of electron trap and the process of free photoelectron trapping are introduced in detail.
详细介绍了电子陷阱的概念以及电子陷阱对自由光电子的束缚过程。 - The results indicate that the chemical sensitization makes the photoelectron decay slower than that of the unsensitized AgCl emulsion, and the decay time is prolonged in the sulfur-plus-gold sensitized emulsion, because the shallow electron trap effect of sulfur-plus-gold sensitization center restrains the recombination of photoelectron and hole.
实验结果表明：化学增感时由于硫加金增感中心的浅电子陷阱作用有效地抑制了空穴与光电子之间的复合，化学增感使得光电子的衰减相对未增感的减缓、衰减时间得到延长； - Electron trap of acceptor type, existing in the nanometre film, has been observed. With the increase of avalanche injection, the created electron trap of acceptor type in interface should play a leading role.
观察到该纳米膜内存在着受主型电子陷阱，随着注入的增长，界面上产生的这种陷阱将起主导作用。 - Dopants Acting as a Shallow Electron Trap
浅电子陷阱掺杂剂 - To analysis the principle of degradation and destruction, a reasonable relationship between the electrostatic potential and 1-V characteristic parameters is raised; a computation model for electron trap effect is originally proposed, which leads to a conception of critical trap electron density.
本文首次建立了晶界势垒高度与伏安特性参数之间的关系，提出了陷阱效应在冲击老化过程的作用模型，引入了临界陷阱电荷密度的概念。 - Shallow Electron Trap Technology
浅电子陷阱技术 - Shallow electron trap technology is one part of doping technology, the research and application of shallow electron trap has become important in recent years.
浅电子陷阱技术是掺杂技术的一个分支，近年来有关它的研究和应用又开始受到人们的重视。 - It is caused by the electron trap with deep energy formed at the original position of the shifted oxygen.
蓝色荧光粉的退化主要是位移氧附近的深能态电子陷阱。 - In this paper, a comprehensive analysis on the electrical characteristics of this film, including interfacial properties, dielectric features, electron trap parameters and the ability of impurity diffusion masking, is made using a variety of methods.
本文采用多种方法，较为全面地分析了不同氮化条件下这种薄膜的界面特性、介电性能、电子陷阱参数、掩蔽杂质扩散能力等电学特性； - Moreover, using the lifetime of free photoelectrons, the optimal doping amount of shallow electron trap dopants was found by analyzing the distribution condition of electron traps in silver halide.
以自由光电子寿命为纽带，通过分析掺杂卤化银晶体中电子陷阱的分布情况，可以确定浅电子陷阱掺杂剂的最佳掺杂浓度。 - NMOSFET ′ s after hot hole injection followed by hot electron injection produce serious degradation, which can be explained by neutral electron trap model and hot carrier induced gate oxide degradation under pulse stress.
NMOSFET′s在热空穴注入后，热电子随后注入时，会有大的退化量，这可以用中性电子陷阱模型和脉冲应力条件下热载流子注入引起的栅氧化层退化来解释。 - The doping of [ Ru ( CN)_6] 4-in the silver bromide cubic emulsion was studied. As a shallow electron trap dopant, it can improve the photographic sensitivity effectively.
研究了[Ru（CN）6]4-在溴化银立方体乳剂中的掺杂，[Ru4（CN）6]4-作为1种浅电子陷阱掺杂剂可有效地改善乳剂的感光性能。 - We think this color change should be ascribed to the electron trap O-centers produced in crystal growth due to the charge compensation.
针对这一变色现象，我们认为是在晶体生长过程由于电荷补偿的需要而产生的O-心的吸收作用导致的。 - The drift tube assembly provides the axial trap for ions in an electron beam ion trap ( EBIT).
漂移管组件为EBIT提供约束离子的轴向电势阱，是EBIT装置的核心区域。 - The adsorption of Ag introduces gap states near or below the conduction band minimum and the Fermi level locates next to or merges in the conduction band, which can act as photo-generated electron trap centers and inhibit the recombination of electron-hole pairs.
Ag吸附引入隙态位于导带底（CBM）以下，且费米能级同样处于导带底附近，此隙态可以作为光生电子捕获中心阻碍电子空穴对的复合。